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General Description of TIP120TU 
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Joined: 2010-11-30 11:35
Posts: 20
Post General Description of TIP120TU
The TIP120TU is one member of the TIP120 family which is designed as the plastic medium power complementary silicon transistors that is designed for general–purpose amplifier and low–speed switching applications.

Features of the TIP120TU are:(1)high DC current gain--hFE = 2500 (Typ) @ IC = 4.0 Adc;(2)Collector–Emitter Sustaining Voltage--@ 100 mAdc VCEO(sus) = 60 Vdc (Min);(3)Low Collector–Emitter Saturation Voltage---VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc;(4)Monolithic Construction with Built–In Base–Emitter Shunt Resistors;(5)TO–220AB Compact Package.

The absolute maximum ratings of the TIP120TU can be summarized as:(1)Collector–Emitter Voltage: 60 Vdc;(2)Collector–Base Voltage: 60 Vdc;(3)Emitter–Base Voltage:5.0 Vdc;(4)Collector Current - Continuous: 5.0 Adc;(5)Collector Current - peak: 8.0 Adc;(6)Base Current: 120 mAdc;(7)Total Power Dissipation @ TC = 25℃: 65 Watts;(8)Unclamped Inductive Load Energy: 50 mJ;(9)Operating and Storage Junction, Temperature Range: –65 ℃ to +150 ℃.


2010-11-30 11:54
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