Dr. Sun Qian, vice president of silicon substrate LED R & D department of Lattice, gave a lecture titled with "R & D and Industrialization of Silicon Substrate GaN High Power LED" to the participants on 2013 the Latest Trends in LED Epitaxial Chip Technology and Special Equipment and Materials Seminar held in Guangzhou on June 10. The speech of Sun Qian shared the latest progress in with their peers a silicon substrate, high-power LED R & D and industrialization and large-size silicon substrate LED technology.

Dr. Sun Qian introduced that the Haitz's Law is in pursuit of cost-effective LED. And the market needs a technology route to follow and break through Haitz law; it should have a larger substrate wafers, chip technology at lower costs, higher efficiency, higher operating current densities and higher optical power. Silicon substrate LED technology would be the best choice.

Meanwhile, Dr. Sun Qian introduced the latest progress in research and development of six-inch silicon substrate high-power LED. According to the introduction, the luminous efficiency of 45mil chip manufactured with the 6-inch silicon substrate GaN-based LED epitaxial wafer and chip manufacturing technology Lattice Power has developed reaches 125lm / W, and the six-inch silicon substrate 45mil LED chip will be put into massive production in next year, its luminous efficiency will be up to 140lm / W.