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Home > Press Release > Netherlands-Based Research Institute Selects USHIO's High-Intensity EUV Light Source for Research and ..
June.12, 2017 - 14:26 — lindsayhou
  

Netherlands-Based Research Institute Selects USHIO's High-Intensity EUV Light Source for Research and Evaluation

The Netherlands Organization for Applied Scientific Research (hereinafter “TNO”) and USHIO INC. (HQ: Tokyo, President and CEO: Kenji Hamashima) announced that TNO opened an experimental EUV exposure and analysis facility (“EBL2”) on March 27, 2017. Through this facility, TNO provides EUV-related companies and institutions with the services to study and evaluate EUV optics as well as masks, pellicles, and sensors.

TNO’s experimental “EBL2” EUV exposure and analysis facility enables in-situ measurement, including the entire process of handling, radiation, and evaluation of samples under a vacuum environment. USHIO’s high-intensity and high-output EUV light source allows exposure and evaluation of a large field (up to a 6-inch mask) while making a great contribution to shortening of the evaluation period.

Wilbert Staring, Director Strategic Accounts, commented, to develop and build EBL2 the contribution of partners like USHIO played a key contribution to create this unique facility. The partnership with USHIO went very well.
 
With the aim of establishing the EUV lithography process for volume manufacturing, USHIO will further evolve its EUV light source technologies for inspection of ultra-fine-pattern masks, and contribute to evolution of the leading-edge semiconductor fabrication process.
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