2016-12-08

Researchers Find New GaN Properties Suitable for Wide-Range of Applications

Gallium nitride (GaN) has emerged as one of the most important and widely used semiconducting materials. Its optoelectronic and mechanical properties make it ideal for a variety of applications, including light-emitting diodes (LEDs), high-temperature transistors, sensors and biocompatible electronic implants in humans.
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2016-11-21

Aixtron and Grand Chip Investment Go Against CFIUS Objections

German MOCVD manufacturer Aixtron and Chinese investor Grand Chip Investment are determined to complete the acquisition business transaction despite objections raised by the Committee on Foreign Investment in the United States (CFIUS).
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2016-08-26

Two GaN Systems’ Founders Retire

Ten years after launching a gallium nitride (GaN) semiconductor company, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems into the world leading manufacturer of GaN power transistors and supplier to more than 500 customers, serial entrepreneurs Patterson and Roberts will leave their operating roles. Patterson will retain a position on GaN Systems’ Board of Directors, while Roberts will remain available to the company as an emeritus contributor.
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2016-08-18

Chinese Manufacturers Catch up in GaN Technology

Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the upstream sector.
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2016-05-26

NXP Unveils New High Performance GaN RF Power Transistors for Cellular Base Stations

NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.
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2016-03-31

Control a GaN Power Stage with a Hercules LaunchPad Development Kit

In my last blog post, I walked you through a hands-on project: dimming a lamp with a gallium nitride (GaN) power stage, a Hercules™ microcontroller and a scroll wheel. I covered setup, design and how to drive the power stage the right way.
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2016-03-23

TI Calls Attention to Standards for Making Reliable GaN Power Transistors

Sandeep Bahl of Texas Instrument stresses the importance of making reliable GaN material will largely rely on joint efforts in the industry to establish related standards in this blog entry.
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2016-02-17

Veeco Partners with imec to Boost Performance in GaN-Based Power Devices

Veeco Instruments Inc., the world’s leading supplier of metal organic chemical vapor deposition (MOCVD) systems, announced today that it has signed a joint development project (JDP) agreement with imec, the Belgium-based nano-electronics research center.  The collaboration is expected to accelerate the development of highly-efficient, Gallium Nitride (GaN) based, power electronic devices using GaN Epi wafers created using Veeco’s Propel® Power GaN MOCVD system.
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2016-01-13

U.S. Researchers Unveil Oxygen’s Role in Strengthening Red LEDs

In the fabrication of solid state lighting devices, scientists are learning, oxygen also plays a two-edged role. While oxygen can impede the effectiveness of gallium nitride (GaN), an enabling material for LEDs, small amounts of oxygen in some cases are needed to enhance the devices' optical properties. GaN doped with europium (Eu), which could provide the red color in LEDs and other displays, is one such case.
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2015-07-13

OEM Group Receives AGHeatpulse RTP System Order From Leading LED Manufacturer

Global semiconductor capital equipment manufacturer OEM Group announced today that a leading maker of LED products has placed a repeat order for an AGHeatpulse® RTP system. The system will be used for annealing gallium-nitride (GaN) films deposited on 150mm sapphire substrates, one of the critical process steps needed in advanced LED fabrication. This repeat order validates again the AGHeatpulse® RTP system's demonstrated capabilities meeting the exacting thermal requirements of new LED manufacturing technologies, and supports the LED industry's move from batch processing of smaller diameter sapphire substrates to single wafer processing of 150mm sapphire substrates.
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2015-06-29

Danish Researchers: Nanowires Could Become the Future for LEDs

The latest research from the Niels Bohr Institute shows that LEDs made from nanowires will use less energy and provide better light. The researchers studied nanowires using X-ray microscopy and with this method they can pinpoint exactly how the nanowire should be designed to give the best properties. The results are published in the scientific journal, ACS Nano.
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2015-03-23

How to Design with GaN Drivers

You may have recently encountered “GaN,” which is replacing silicon (Si) in some key applications for power conversion. In this blog series, “How to design with GaN,” I will take a look at how gallium nitride (GaN) is different from Si and what the key considerations are when creating a power design with GaN.
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2015-02-12

Fraunhofer Institute for Applied Solid State Physics Acquires Veeco GaN MOCVD System

Veeco Instruments announced that the Fraunhofer Institute for Applied Solid State Physics IAF, a leading German compound semiconductor research institution, has purchased a TurboDisc® K465i Gallium Nitride (GaN) MOCVD System. 
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2014-11-10

AIX R6 Sets New Standards in LED Manufacturing

AIXTRON, a worldwide leading provider of deposition equipment to the semiconductor industry, today presented its next generation MOCVD system at the China SSL international trade fair. The new AIX R6 has been designed for the production of LEDs based on Gallium Nitride (GaN) and can be delivered in 12x6-, 31x4-, 121x2-inch wafer configurations. Equipped with numerous technical innovations the new tool will lower operational costs significantly while simplifying usability and process control.
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2014-08-12

Fukuda Crystal Laboratory’s 2” SCAM Crystal Might Replace Sapphire Substrates in the Future

Japan’s Fukuda Crystal Laboratory has successfully developed a 50 mm (about 2-inch) ScAlMgO4 (SCAM) crystal, according to a Chinese-language Nikkei Technology report.
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2014-05-13

Roskill: Gallium Market to Benefit as GaN-based LED Lighting Comes of Age

Demand for gallium is forecast to rise rapidly between 2014 and 2020 as general lighting moves away from incandescent and fluorescent lamps to light-emitting diodes (LEDs).  This strong growth is not, however, likely to result in any tightness in supply as the market is oversupplied and likely to remain so.  
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2014-03-26

New Technique Makes LEDs Brighter, More Resilient

Researchers from North Carolina State University have developed a new processing technique that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosphorus-derived acid.
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2013-08-06

New York City Businesses Can Save Big on Soraa’s Industry Leading LED MR16 Lamps

To accelerate the adoption of high quality, energy efficient LED lighting Con Edison of New York is offering substantial rebates (approximately $22, based on 13.2¢/kWh) on Soraa’s GaN on GaN™, full visible spectrum LED MR16 lamps. With the rebates, New York City businesses now have another incentive to install Soraa’s MR16 LED lamps, well known as the best LED MR16 retrofit lamp available, delivering the highest light output, color rendering, whiteness, and beam of any comparable product. Soraa will help you transform your ordinary li...
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2013-08-06

Cree Licenses GaN Device Patents to Transphorm

Cree, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and...
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2013-07-18

Soraa’s Breakthrough LED Technology Stimulates Expansion of Its Sales Team

A surge in demand for Soraa’s full visible spectrum GaN on GaN™ LED MR16 lamps has led the company to appoint two new leaders to its sales organization—George Stringer and Nick Farraway. George joins the company as Senior Vice President of North America Sales and Nick joins as Senior Vice President of International Sales; both will report to Tom Caulfield, President and COO of Soraa. “The Soraa VIVID LED MR16 lamp is widely regarded as the best in the world in terms of brightness and color rendering—this has fuel...
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2013-07-04

Plessey Helps Plymouth City Council to Achieve Carbon Reduction Strategy with GaN-On-Si LEDs

Plessey is working closely with Plymouth City Council, to help achieve the Council's carbon reduction strategy for all their managed buildings and infrastructure. Plessey recently released the first commercially available 350mW GaN-on-silicon LEDs. The lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line. The GaN-on-silicon LEDs use a much thinner GaN layer at only 2.5μm, and they are cheaper than LEDs grown on sapphire or SiC. This latest solid-state LED lighting solution to be employed in Pl...
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2013-07-02

Soraa Reveals First GaN on GaN LED Packaged in a Silicon Wafer Level Packaging

Soraa has recently released the first GaN on GaN LED in a 50W halogen equivalent MR16 lamp with several new features.This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original silicon-based wafer level packaging. Soraa GaN on GaN LED packaged in a silicon-based wafer level packaging Source: Yole Développement Soraa used the GaN characteristics like the optical transparency and the high electrical and thermal conductivity to create a unique vertical structure for these LEDs. The layers depos...
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2013-07-01

Plessey Releases 350mW GaN on Silicon LEDs

Plessey Semiconductors Ltd says that samples of 350mW GaN-on-Si LEDs are now available. The entry-level lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The new LEDs are targeted at a variety of solid-state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and pulse lighting applications. “The MAGIC LED product range is expanding in both light output and efficacy. The PLB010350 is our fi...
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2013-06-24

GaN LED Shipments to Exceed 100 Billion Units In 2013

According to IHS isuppli's research's report titled “Q2 GaN LED Supply and Demand”, more than 100 billion GaN LEDs will ship in 2013. It means that there are 15 GaN LEDs for every person on the earth. In our daily life, there are many articles using LEDs. Mobile phones generally contain 5 or 10 LEDs and televisions contain LEDs numbering up to the hundreds, LED consumption is clearly large. And GaN LEDs account for 85% of total revenues in the LED industry. The GaN LED market is part of the total global LED market,...
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2013-05-02

GaN LED on Silicon Plus Light Extraction Yields Cost-Effective Lighting

Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter material being used. Significant effort is being made to grow GaN on ubiquitous larger diameter (6” or greater) silicon wafers, a substrate that offers significant substrate cost reduction, together with the ability to process in automated IC production lines. Reasonable estimates are that potential savings on the order of 80% over tr...
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2012-08-16

AIXTRON Receives New Reactor Order from Jilin University for GaN UV and White LED Research

AIXTRON SE today announced a new MOCVD system order from existing customer Jilin University China. The contract is for one CCS reactor in a 3x2-inch wafer configuration, which will be dedicated to the growth of gallium nitride materials for UV and white LEDs. One of AIXTRON’s local support teams has installed and commissioned the new reactor in a state-of-the-art clean-room facility at Jilin University in Changchun, China. Dr. Zhang of the Jilin University, State Key Laboratory on Integrated Optoelectronics, comments, “We alre...
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2012-07-11

Testing of GaN Substrates Yields Successful Results: Further Developments to be Centered on LED Backlights

It was just a few days ago when Japan-based LED maker, Toyota Gosei Co., Ltd., announced its plan to manufacture new LED products using gallium nitride substrates as base components. Measuring up to several hundred µms in thickness, these essential materials, once properly assembled with 1mmx1mm LED chips, provide potential brightness of up to 400 lumens, approximately three times the amount delivered by LEDs fabricated on sapphire substrates. As has been the case with the 8-inch, silicon-based wafer level packaging technology introduced a few years earlier, it is b...
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2010-07-27

Meijo University orders AIXTRON CCS® MOCVD system for GaN based UV and white LEDs

AIXTRON AG today announced a new order for one Close Coupled Showerhead® GaN based LED MOCVD system from Meijo University, in Nagoya, an established AIXTRON customer in Japan. The order was received earlier this year and the system will be delivered in the fourth quarter of 2010 in a 3x2-inch wafer configuration.The local AIXTRON support team will commission the new reactor at Meijo University.
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2010-07-06

SILAN orders six AIXTRON New Generation CRIUS II systems for GaN UHB-LED boost

AIXTRON AG announced today a new order for six CRIUS II 55x2-inch configuration deposition systems from Hangzhou Silan Microelectronics Co., Ltd., ‘SILAN’. The Hangzhou, PR China based company, placed the order in the second quarter of 2010 and will take delivery of the systems over the fourth quarter 2010 to first quarter 2011 period. The systems will be used for the volume production of GaN ultra-high brightness (UHB) blue/green LEDs.
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2010-06-04

The Availability of Semi-Polar GaN Wafers for LED Makers

Ostendo Technologies Inc. and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, announce their joint development on Semi-Polar (11-22) GaN layer on sapphire substrate wafers is now available.
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 “As the demands on our customer’s fixtures become more challenging, we need to ensure our Color portfolio enables them to meet these demands. This increase in flux across several key colors will give our customers a significa... READ MORE

Samsung Electronics announced a new family of chip-on-board LED lighting packages, labeled the “Samsung D-series Special Color.” 

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