2017-05-18

Infineon Starts Volume Production of First Full-SiC-Module

Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.
Continue reading
2015-07-13

Cree Acquires Arkansas Power Electronics International

Cree, a market leader in silicon-carbide (SiC) power and RF products announced the acquisition of APEI, a global leader in power modules and power electronics applications. Combining two highly complementary innovators, the acquisition enables Cree’s Power and RF business to extend its leadership position and help to accelerate the market for high-performance, best-in-class SiC power modules.
Continue reading
2015-04-02

Manufacturers Remain Divided About LED Substrate Technology

Leading LED chip industry experts had very different perspectives on GaN LED substrates at 2015 LED Executive Summit hosted by SEMI at TILS 2015 in TWTC Nangang Exhibition Hall, Taipei, Taiwan recently.
Continue reading
2014-12-17

Charles & Colvard and Cree Enter Into a New Exclusive Supply Agreement

Charles & Colvard, Ltd. (NASDAQ:CTHR), the sole source of created moissanite and Forever Brilliant®, The World’s Most Brilliant Gem®, entered into a new Exclusive Supply Agreement on December 12, 2014 with Cree, Inc. (NASDAQ:CREE) for purchases of silicon carbide (SiC) crystals.
Continue reading
2014-10-27

Cree's New SiC Technology Lowers High-Power LED Costs

Cree achieves another fundamental breakthrough in lighting-class LED performance with the groundbreaking SC5 Technology™ Platform. The new platform powers the next generation of lighting with the introduction of Extreme High Power (XHP) LEDs. This new class of LEDs can reduce system costs by up to 40 percent in most lighting applications.
Continue reading
2013-03-18

Cree Announces Volume Production of Second-Generation SiC MOSFET

Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density and switching efficiency at half the cost-per-amp of Cree’s previous-generation MOSFETs. At this price/performance point, they enable lower system costs for OEMs and provide additional savings to the end-user through increased efficiency and lower installation costs due to the lower size and weight of SiC-based systems. ...
Continue reading
2010-03-23

Fraunhofer Institute orders AIXTRON MOCVD tool for GaN on SiC transistors

AIXTRON AG today announced an order from its long-time customer, Fraunhofer Institute for Applied Solid State Physics (IAF) located in Freiburg, Germany. IAF has ordered one AIX 2800G4 HT, 11x4 inch MOCVD tool which it will be using for GaN on SiC for high power, high frequency applications to enable commercialization of GaN devices in the near future. The IAF placed its order in the fourth quarter of 2009 and AIXTRON’s support team will install and commission the new reactor at their laboratory in the third quarter of 2010.
Continue reading
2010-02-04

Cree and Arrow Electronics Sign Distribution Agreement to Serve Global Adoption of Silicon Carbide-Based Power Electronics

Cree, Inc. (Nasdaq: CREE), a market leader in LED lighting and silicon carbide (SiC) semiconductor components, announces a distribution agreement with Arrow Electronics, Inc. for Cree SiC power products. The agreement gives Arrow’s customers ready access to Cree’s latest commercially-available SiC Junction Barrier Schottky (JBS) products. Among the Cree products available through Arrow will be the recently released Z-REC™ Series of 600-V Schottky diodes and the groundbreaking 1200-V Schottky diode line.
Continue reading
2009-02-20

Cree and Powerex Jointly to Develop New SiC Power Switches for Next-Generation Military Systems

Cree, Inc. announces it will work with both the United States Air Force Research Laboratory (AFRL) Propulsion Directorate and high-power module pioneer Powerex, Inc., to develop a demonstration dual switch 1200-volt, 100-amp power module featuring all-SiC semiconductors and capable of operating at junction temperatures up to 200 degrees C. The combination of advanced SiC devices and innovative package design allows the module to operate at temperatures beyond those achievable with a silicon IGBT-based module.
Continue reading

 “As the demands on our customer’s fixtures become more challenging, we need to ensure our Color portfolio enables them to meet these demands. This increase in flux across several key colors will give our customers a significa... READ MORE

Samsung Electronics announced a new family of chip-on-board LED lighting packages, labeled the “Samsung D-series Special Color.” 

READ MORE