Toshiba to Expand Range of GaN-on-Si High Power White LEDs

Toshiba Electronics Europe has added four new products to its TL1L4 series of white LEDs. These new additions provide a high luminous flux and are suited to applications ranging from street and stadium lighting to LED light bulbs and down lighting for use in the home.

Toshiba Electronics Europe's newly added TL1L4 series of white LEDs. (Toshiba/LEDinside)

Like the existing members of the TL1L4 series, GaN-on-Si[1]  technology has been utilised to create LEDs optimised for both output and energy efficiency. However, the new 4A5B type improves upon these existing products by providing a luminous flux of 140lm (min.)[2], compared to 130lm (min.)[2]. The new products make it possible to meet the market demands for improved lighting fixture efficacy by achieving efficacies of over 110lm/W[3]. The LEDs can also contribute to reducing the power consumed by LED lighting.

Measuring 3.5mm x 3.5mm, with a lens-top, the new LEDs offer differing levels of correlated colour temperature (CCT), with the TL1L4-DW0 providing 6500K, the TL1L4-NT0 providing 5700K, the TL1L4-NW0 5000K and the TL1L4-WH0 4000K. All offer a colour rendering index of Ra70 min. and a typ. forward voltage of 2.8V.

Notes:

[1] Technology to produce gallium nitride (GaN) on silicon (Si) wafers.

[2] Test conditions: IF=350mA, Tj=85°C

[3] Under conditions of 90% driver efficiency, 90% optical efficiency, Tj=85°C

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