The Industrial Technology Research Institute (ITRI) of Taiwan has recently signed an agreement with Taiyo Nippon Sanso Corp (TNSC) for use of their AP (atmospheric pressure) MOCVD to develop UVA LEDs on GaN substrate.
ITRI believes that AP MOCVD can produce UVA LEDs onto GaN substrates that are comparable in cost to sapphire substrate but with higher performance. This is in part to GaN substrate having low dislocation density and easy current spreading.
The agreement between the two firms is in hopes to create a new standard for UVA LED technology and promote GaN on GaN application.
