Group III-nitride materials have been widely used for visible and ultraviolet LEDs and blue, violet laser diodes in the past decade. Most of these optoelectronic devices are typically fabricated on the conventional polar (0001) c-plane oriented substrate materials. Devices grown on the polar substrate orientation suffer undesirable spontaneous and piezoelectric polarization resulting in significant band bending in the quantum well. This reduces radiative recombination efficiency and lowers device performance.