LayTec : Advanced Stress Control of GaN on Silicon(001) with EpiCurve TT during HEMT Growth

The challenges of GaN growth on Si(111), especially for LED growth, are well known and meanwhile controllable. Cooldown-assisted layer cracking as a result of high tensile stress can be prevented and crystal quality can be enhanced by sophisticated interlayers. Numerous institutions worldwide are already using LayTec‘s EpiCurve  TT with advanced curvature resolution for high quality GaN devices on large scale Silicon substrates.

Now, this experience is being transferred to growth on Si(001) and Si(110), because GaN based power electronics can be easily integrated with Si standard electronics (CMOS) and is available in large sizes up to 300 mm.

At the International Workshop on Nitride Semiconductors (Japan, October 2012), Jonas Hennig of Otto-von-Guericke Universit Magdeburg (Germany) reported about high performance of GaN HEMT structures on Si(001) with highly optimized interlayers to control stress and defect density [1].

According to Mr. Hennig, in-situ growth monitoring by Epi- Curve  TT is a great help for their strain engineering. Fig. 1 shows temperature (red) and advanced resolution curvature (black) measurements, Fig. 2 - reflectance measurements at three wavelengths. The well pronounced Fabry-Perot oscillations at 633 nm (blue) and 950 nm (red) in correlation with the smooth development of the curvature show the high quality of the GaN. Furthermore, during the growth of interlayers, when the temperature is being brought down, an abrubt increase of curvature can be observed (Fig. 1).

The three combined reflectance signals help to determine the growth rates and adjust the growth parameters. Additionally, the 405 nm reflectance (Fig. 2 - black) provides information on the structural interface quality.

The work at Otto-von-Guericke University and other institution which use LayTec‘s in-situ tools for Silicon applications shows that the quality of GaN/Si can be significantly improved by advanced curvature monitoring in combination with multiple wavelength reflectance. LayTec is proud to be a part of the technology transfer from Si(111) in LED growth to Si(001) and Si(110) in power electronics.

[1] J. Hennig et al., GaN/AlN/AlInN based HEMTs grown by MOVPE on Si (111) and Si (001), Otto-von-Guericke University, IWN, Okt. 2012, Sapporo, Japan

Disclaimers of Warranties
1. The website does not warrant the following:
1.1 The services from the website meets your requirement;
1.2 The accuracy, completeness, or timeliness of the service;
1.3 The accuracy, reliability of conclusions drawn from using the service;
1.4 The accuracy, completeness, or timeliness, or security of any information that you download from the website
2. The services provided by the website is intended for your reference only. The website shall be not be responsible for investment decisions, damages, or other losses resulting from use of the website or the information contained therein<
Proprietary Rights
You may not reproduce, modify, create derivative works from, display, perform, publish, distribute, disseminate, broadcast or circulate to any third party, any materials contained on the services without the express prior written consent of the website or its legal owner.

With up to 2000lm per LED, LUXEON 7070 delivers the power, efficacy and solution cost reductions luminaire manufacturers need   San Jose, CA – August 31, 2021 – More lumens, higher efficacy, and lower system costs are the... READ MORE

 - Osconiq E 2835 CRI 90 (QD) expands ams OSRAM's portfolio of lighting solutions that provide very high quality in a new mid-power LED. - In-house Quantum Dot technology ensures outstanding efficiency values of over 200 lm/W, even at... READ MORE