Ushio Introduces New Single-mode 670 nm Red Laser Diodes

Ushio announced the initiation of its new laser diodes mass production. The new products HL67191MG and HL67192MG offer operation at the 670 nm wavelength. Providing an optical output power of 15 mW (CW) and 30 mW (pulsed), these single-mode LDs deliver high-temperature performance (up to 70°C) within a φ5.6 mm package. Both LDs achieve a low operating current of 30 mA at 25°C (15 mW in CW operation) and feature built-in monitoring photodiodes.

(Image: Ushio)

According to Ushio, these new red laser diodes offer a number of improvements over some existing models. In keeping with Ushio’s habit of providing customization options, engineers gain more freedom to fit the LDs into their preferred electrical circuit structure, with the added possibility to feature an extra pin-out for the new models. Ushio’s previously existing 670 nm laser diodes are able to withstand ambient temperatures of up to 60°C. Now, with the release of the two new models, an additional 10°C margin brings a new level of durability to Ushio’s laser line-up. Not only does this allow the lasers to remain fully operational in hotter environments, but they remain unaffected in situations which would previously contribute to the premature failure of the LDs. This feature increases the suitability of these lasers to be implemented into devices which do not feature an active cooling element.

These qualities combine to result in a pair of high-reliability, cost-efficient emitters which are ideal for battery-powered sensing and precise measurement equipment.

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