A team of researchers at Chung-Shan Institute of Science and Technology (CSIST) have developed aluminum nitride (AlN) substrate for high power LED. The project is backed by Taiwan Ministry of Economic Affair’s Technology Innovation Center, according to Taiwanese media source Micro-Electronics on June 20, 2014.
Cree LED®, a Penguin Solutions brand (Nasdaq: PENG), today announced its new XLamp® XE-B LEDs, extending the industry-leading XLamp Element family into an even smaller form factor to enable new levels of design flexibility and performa... READ
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Seoul Semiconductor Co., Ltd., a global opto-semiconductor technology company, announced today that its world's first High Voltage (HV) opto-semiconductor technology has entered mass production with four of the world's top automotive b... READ
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