Taiwan-based Research Team Develops Low-temperature GaN Wafer Technology to Reduce Micro LED Production Cost

A research team led by a professor from Department of Optics and Photonics at Taiwan’s National Central University revealed a new production method for Micro LED epitaxy wafer. The team developed GaN thin film wafer under low temperature via an approach of high-energy physic. According to the researchers, the method would cost only one tenth of the current Micro LED production cost and could be applied for mass production. (Image:NCU) By combining data analysis and semiconductor manufacture process, the researchers aim to find innovative approaches for M...
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Group Stealing Win Semiconductors Trade Secrets Detained by Taiwanese Police

Taiwanese police have busted a group suspected of stealing business secrets from leading international GaN wafer supplier Win Semiconductors, reported CNA.
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Cree LED J Series® 2835 LEDs are optimized to deliver the best value with high efficacy to low-density, indoor lighting applications, such as downlights, troffers and panel lights. Pro9™ version LEDs deliver up to 24% higher efficacy... READ MORE

OSIRE® E3731i intelligent RGB LED enables creation of dynamic color and motion effects across hundreds of LEDs The intelligent RGBi uses a new and license-free Open System Protocol for communication with any microcontroller Combina... READ MORE