3D GaN Nanowire-LEDinside

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2016-10-21

CEA LETI Looks into 3D GaN Nanowires for Ultra Bright LED Lighting

Grenoble-based research institute CEA LETI (LETI) recently shared with LEDinside how it is transforming nanowire technology first designed for transistors into making ultra-bright LEDs.

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Silanna UV is pleased to announce the release of its next generation Far UVC LED, the SF2-3T9B5L1-TB, which exceeds even the popular SF1 series, with UVC wavelengths down to 230nm (typical 233nm); doubled output power; and 2x improvement in te... READ MORE

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