2016-11-04

UCSB Finds Metal Impurities in Metal Recombination Centers Affect LED Efficiency

Using cutting-edge first-principles calculations, researchers at the University of California, Santa Barbara (UCSB) have demonstrated the mechanism by which transition metal impurities - iron in particular - can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride.
Continue reading
Recently, OMINSU Vietnam signed a strategic agreement with Seoul Semiconductor, marking a pivotal turning point in elevating the “Made in Vietnam” LED lighting brand. At the signing ceremony, Vietnam’s OMINSU and Seoul Semicond... READ MORE
From June 19 to 22, 2025, Samsung Electronics will collaborate with globally renowned artists to celebrate global diversity, artistic innovation and the power of display technology at Art Basel in Basel 2025, the world’s largest art fair he... READ MORE