2016-11-04

UCSB Finds Metal Impurities in Metal Recombination Centers Affect LED Efficiency

Using cutting-edge first-principles calculations, researchers at the University of California, Santa Barbara (UCSB) have demonstrated the mechanism by which transition metal impurities - iron in particular - can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride.
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Tokushima, Japan – 17 June 2022: Nichia, the world’s largest LED manufacturer and inventor of high-brightness blue and white LEDs, announces the addition of the Direct Mountable Chip Series (Part Number: NVSWE21A-V1) to the portfol... READ MORE

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