2016-11-04

UCSB Finds Metal Impurities in Metal Recombination Centers Affect LED Efficiency

Using cutting-edge first-principles calculations, researchers at the University of California, Santa Barbara (UCSB) have demonstrated the mechanism by which transition metal impurities - iron in particular - can act as nonradiative recombination centers in nitride semiconductors. The work highlights that such impurities can have a detrimental impact on the efficiency of light-emitting diodes (LEDs) based on gallium nitride or indium gallium nitride.
Continue reading

NF2W585AR-P8 is a dual function LED that provides both white light and high doses of energy geared for inactivation of various prevalent bacteria. With a 405nm wavelength1 die known to be effective in sterilization, this LED can be used t... READ MORE

  The 5050 LED is replacing the 3535 LED, which has long been the leader in the outdoor lighting market. The existing ceramic-based 3535 has excellent reliability but is expensive. At present, the 5050 LED, which has achieved remarkable p... READ MORE