2018-04-17

ALLOS Wins Compound Semiconductors Material and Substrates Award

ALLOS Semiconductors won this year’s prestigious Compound Semiconductor Industry Substrates and Materials Award for showing breakdown voltages of > 1400 V on GaN-on-Si power semiconductor epiwafers. 
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New TARA2000-AUT-SAFE family includes unique interlock loop method for completely safeguarding ultra-fast detection of faults that can compromise eye safety Interlock method reduces bill of materials resulting in lower system cost 940nm emitte... READ MORE

40V-150V breakdown voltage lineup: ideal for motor drive and industrial power supplies ROHM has developed Nch MOSFETs (40V/60V/80V/100V/150V) RS6xxxxBx / RH6xxxxBx series, 13 part numbers, suitable for applications operating on 24V/36V/48V pow... READ MORE