Manufacturing InGaAs photodetectors directly on CMOS silicon revolutionises shortwave infrared sensors for consumer markets. In quite a number of applications there is much demand for scalable, low-cost, high-performance sensors. Such sensors are wanted for autonomous systems, robotics, defence and aerospace technologies, artificial intelligence (AI), mobile phones, smart watches, and augmented reality/virtual reality (AR/VR). Within the sensor portfolio, those based on silicon CMOS dominate detection in the visible as well as in the near-infrared at wavelengths u...

Researchers from Hunan University have designed and grown wafer-scale uniform green GaN epilayer on silicon wafers (4-inch and 6-inch in size). The epilayer was of very high uniformity and showed excellent properties. Using this wafer, the researchers developed green microLED displays reaching over 10 million nits. This epilayer demonstrated a low dislocation density of 5.25×108 cm-2, minimal wafer bowing of 16.7 μm, and high wavelength uniformity (STDEV<1 nm). The researcher integrated the Micro-LEDs with CMOS circuits and created 1080x780 monochrom...