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Home > News > Cree achieves major breakthrough in SiC materials technology and devises 150-mm SiC Substrates
August.31, 2010 - 10:13 — e.yuan
  

Cree achieves major breakthrough in SiC materials technology and devises 150-mm SiC Substrates

Cree, Inc. has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2.

The current Cree standard for SiC substrates is 100-mm diameter material. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including LEDs, power switching devices and RF power transistors for wireless communications.

The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.

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