ITRI and TNSC Unite to Promote UVA LED Production on GaN Substrate

News Source：

Compound Semiconductor

The Industrial Technology Research Institute (ITRI) of Taiwan has recently signed an agreement with Taiyo Nippon Sanso Corp (TNSC) for use of their AP (atmospheric pressure) MOCVD to develop UVA LEDs on GaN substrate.

ITRI believes that AP MOCVD can produce UVA LEDs onto GaN substrates that are comparable in cost to sapphire substrate but with higher performance. This is in part to GaN substrate having low dislocation density and easy current spreading.

The agreement between the two firms is in hopes to create a new standard for UVA LED technology and promote GaN on GaN application.

Disclaimers of Warranties
1. The website does not warrant the following:
1.1 The services from the website meets your requirement;
1.2 The accuracy, completeness, or timeliness of the service;
1.3 The accuracy, reliability of conclusions drawn from using the service;
1.4 The accuracy, completeness, or timeliness, or security of any information that you download from the website
2. The services provided by the website is intended for your reference only. The website shall be not be responsible for investment decisions, damages, or other losses resulting from use of the website or the information contained therein<

Proprietary Rights
You may not reproduce, modify, create derivative works from, display, perform, publish, distribute, disseminate, broadcast or circulate to any third party, any materials contained on the services without the express prior written consent of the website or its legal owner.