China’s Sanan Invests 12 Billion CNY in Micro LED and Mini LED Wafer and Chip Development

Sanan Optoelectronics announced a CNY 12 billion (US$ 1.78 billion) investment agreement with Hubei Province on April 25, 2019 for Micro LED and Mini LED wafer and chip development and production.

According to the agreement, Sanan will increase investment of III-V compound semiconductors for Micro LED and Mini LED wafer and chip production.

(Image: Samsung)

In September 2018, Sanan was said that it will build the first production line for Micro LED wafers and chips in 2019. The Chinese company has also worked closely with Samsung in Micro LED technology development. They signed a prepayment agreement in February 2018, under which Samsung will give Sanan a prepayment of US$ 16.83 million to secure a certain amount of LED chips used for producing displays. Also, Samsung will consider Sanan as its major chip supplier once the Chinese LED chip maker is capable of producing the desired chips in volume.

Sanan has applied for 27 patents of Micro LED technology and plans to manufacture Micro LED products for wearable devices and extra-large sized panels. The LED chip maker has reportedly developed 20μm Micro LED products and flip chip LED sized four and ten ‎μm‎.

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