Cree recently has introduces a new seven 1200V Z-Rec™ silicon carbide (SiC) Schottky diodes to advance the adoption of silicon carbide power devices into mainstream power applications.

Cree Z-Rec diodes feature zero reverse recovery, resulting in up to a 50% reduction in switching losses versus comparable silicon diodes. They also exhibit consistent switching performance across their entire temperature range.
When used in conjunction with Cree’s recently-introduced 1200V SiC power MOSFETs, these SiC Schottky diodes enable the implementation of all-SiC power electronic circuits with the capability to operate at up to four times higher switching frequencies when compared to conventional silicon diodes and IGBTs. This enables a reduction in the size, complexity and cost of inverter circuitry, while achieving extremely high system efficiency.
In addition, this new family has the additional benefits of higher surge ratings and avalanche capabilities than the previous generation of SiC Schottky diodes, helping to increase overall system reliability.

These devices are ideal as boost diodes and anti-parallel diodes in solar inverters and 3-phase motor drive circuits, as well as in power factor correction (PFC) boost circuits in power supplies and UPS equipment. They can also be used in applications where engineers typically parallel many devices to address higher power requirements.