GaN HEMT Transistor-LEDinside

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2014-05-09

Cree Announces GaN HEMT Transistors to Support Data-Hungry Small Cell Networks

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.

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