2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading

Veeco Instruments Inc. today announced that a global leader in optical communications laser manufacturing placed orders for multiple Lumina® Metal Organic Chemical Vapor Deposition (MOCVD) systems and multiple Spector® Ion Beam Sputter... READ MORE

Clive Davis, the iconic, award-winning record producer known for launching the careers of Whitney Houston, Bruce Springsteen, Janis Joplin, and more, chose Samsung to help transform his Westchester, New York home theater into a world-class cin... READ MORE