2017-05-11

X-FAB and Exagan Successfully Produce First GaN-on-Silicon Devices on 200-mm Wafers

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.
Continue reading
  Violumas is excited to announce the addition of UVA and UVB wavelengths to its VioBeam-1X1 series portfolio. Featuring 10° fused silica optics combined with a high-power UV LED, the product series now includes 405nm, 395nm, 385nm, 37... READ MORE
Samsung today announced a new edition of its large-format LED display, The Wall, marking a pivotal expansion to its Chip on Board (CoB) lineup. Like earlier models of The Wall, the MPF series optimizes viewing experiences across an array of en... READ MORE