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2018-02-05

IEMN Shows More Than 1400 V on ALLOS’ New GaN-on-Si Epiwafer Product

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.

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[News] From LED Driver ICs to MBEyes Display Inspection: Macroblock Presents a Comprehensive Display Technology Portfolio

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