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2018-02-05

IEMN Shows More Than 1400 V on ALLOS’ New GaN-on-Si Epiwafer Product

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.

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1 [News] FORVIA HELLA Launches Fully Localized High-Resolution Headlamp System SSL | HD in China for the First Time
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6 [News] Cree LED Introduces XLamp XE-B LEDs for Directional Lighting Applications, Delivering High Intensity and Design Flexibility in an Ultra-Compact Package
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[News] Cree LED Introduces XLamp XE-B LEDs for Directional Lighting Applications, Delivering High Intensity and Design Flexibility in an Ultra-Compact Package

Cree LED®, a Penguin Solutions brand (Nasdaq: PENG), today announced its new XLamp® XE-B LEDs, extending the industry-leading XLamp Element family into an even smaller form factor to enable new levels of design flexibility and performa... READ MORE

[News] Seoul Semiconductor's World-First 'HV Opto-Semiconductor' Powers Up Global Top 4 Automakers

Seoul Semiconductor Co., Ltd., a global opto-semiconductor technology company, announced today that its world's first High Voltage (HV) opto-semiconductor technology has entered mass production with four of the world's top automotive b... READ MORE

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