2018-02-05

IEMN Shows More Than 1400 V on ALLOS’ New GaN-on-Si Epiwafer Product

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.  
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Violumas, provider of high-power UV LED solutions and inventor of 3-PAD LED technology, has released its next-generation 255nm, 265nm, and 275nm LEDs in both SMD and COB configurations. The radiant flux of the new 275nm and 265nm LEDs has incr... READ MORE

Absen, a global leader in LED display technology, has concluded a hugely successful week at Integrated Systems Europe (ISE) 2026, securing a series of prestigious accolades that highlight the company’s long history of innovation. The eve... READ MORE