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Home > GaN-on-Si technology
2018-09-21

Plessy Selects Aixtron’s MOCVD System for GaN-on-Si Development Targeting Micro LED Applications

Plessey has been speeding up its progress of Micro LED technology development. After announcing the partnership with Jasper Display Corp (JDC) for the backplanes, Plessey has ordered MOCVD equipment from AIXTRON SE to boost its manufacturing capability of GaN-on-Si wafers targeting Micro LED applications.
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[News] Cree LED and Blizzard Lighting Enter Settlement and Limited License Agreement

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and Blizzard Lighting LLC (‘Blizzard’) today announced that they have reached a mutually beneficial settlement resolving a patent infringement dispute involving Cree LED’s p... READ MORE

[News] ALLOS and Ennostar Forge Strategic Partnership to Launch 200 mm Supply Chain for MicroLEDs
ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration r... READ MORE
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