2018-11-14

EpiGaN Increases Production with AIXTRON’s MOCVD Equipment

EpiGaN, the Belgian GaN-on-Si and GaN-on-SiC epitaxial wafer provider, has ordered a new AIX G5+ C system from AIXTRON to expand its production capability for large size wafer.   The new AIXTRON AIX G5+ C reactor will be installed at EpiGaN’s manufacturing site in Hasselt Belgium in the first quarter of 2019 and start to operate afterwards. The fully automated Planetary® MOCVD system features in-situ chamber cleaning and enables configurations of 8x6 inch or 5x8 inch epitaxial wafers to be automatically loaded and removed by ...
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2017-05-16

EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications

EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). 
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2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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