EpiGaN Increases Production with AIXTRON’s MOCVD Equipment

EpiGaN, the Belgian GaN-on-Si and GaN-on-SiC epitaxial wafer provider, has ordered a new AIX G5+ C system from AIXTRON to expand its production capability for large size wafer.

 

The new AIXTRON AIX G5+ C reactor will be installed at EpiGaN’s manufacturing site in Hasselt Belgium in the first quarter of 2019 and start to operate afterwards. The fully automated Planetary® MOCVD system features in-situ chamber cleaning and enables configurations of 8x6 inch or 5x8 inch epitaxial wafers to be automatically loaded and removed by a cassette-to-cassette wafer transfer module.

EpiGaN focuses on GaN-on-Si and GaN-on-SiC material product solutions for next-generation semiconductor devices for telecom, power electronics, and sensor applications."The demand of our global customer base for GaN product solutions is boosting. Our key customers are getting ready to launch and scale-up products based on our GaN RF-power technology which is optimized for 5G broadband network applications. With AIXTRON’s AIX G5+ C Planetary® system, EpiGaN will increase its capacity for 150mm and 200mm product solutions to scope the increasing market demand,” said EpiGaN co-founder and CEO Dr. Marianne Germain.

Dr. Felix Grawert, President of AIXTRON, commented, “We are confident the AIX G5+ C will support EpiGaN’s demanding requirements for high-quality, cost-effective production of GaN epitaxial wafers as our tool meets the highest standards in terms of uniformity and particle density.”

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