Kyma Technologies has tapped into the market for GaN crystal growth equipment. The firm’s GaN crystal growth system is based on the hydride vapour phase epitaxy (HVPE) growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN, GaAs, InP, and CdS. HVPE is the dominant process used today for production of free-standing GaN substrates and recently has been used by Kyma and others to produce high quality GaN on sapphire templates and GaN on silicon templates. HVPE g...