2013-02-19

Laytec Launches New in-situ GaN LED Monitoring System

Laytec has upgraded in-situ GaN LED monitoring system. LED manufacturers would know the emission wavelength of the final device during MOCVD growth. Today, according to the Solid State Lighting road map, the wavelength variation across a wafer should be less than 1 nm. This means a less than 1 K (10C) variation of the GaN surface temperature during InGaN MQW growth. LayTec’s Pyro 400 is widely used for enabling fab-wide GaN surface temperature uniformity in many LED manufacturers production lines. Meanwhile, more complex LED structur...
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The CLEDIA project, co-financed by the Auvergne-Rhône-Alpes A group of logos with different names AI-generated content may be incorrect. Region and Bpifrance has just been completed after three years of collaborative innovation between P... READ MORE

Seoul Semiconductor has developed an innovative LED light source—SunLike—that reproduces a spectrum nearly identical to natural sunlight. The technology is gaining attention for its positive effects on eye health, including reducing ... READ MORE