Toshiba’s New Flexible OLED Panel

Toshiba has released a flexible OLED panel driven by oxide semiconductor TFTs at the 49th SID International Symposium, Seminar & Exhibition (SID 2011).

The company is able to use plastic substrates with lowering the highest process temperature in the formation of oxide TFTs to 200°C.
The prototyped flexible OLED panel has a screen size of 3 inches and a pixel count of 160 x 120. To realize color display, Toshiba formed white OLED elements and color filters on oxide TFTs.

The oxide semiconductor constituting the TFTs is indium gallium zinc oxide. The gate driver circuit was also formed on the plastic substrate by using oxide TFTs. The OLED element is a bottom-emission type, and the TFT element has a bottom-gate structure (the etch-stopper method).

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