Aixtron MOCVD System Used by Japanese Gas Manufacturer to Develop GaN-on-SiC-on-Si

Aixtron SE announced gas manufacturer Air Water Inc. based in Azumino, Japan has successfully installed a fully automated AIX G5 HT Planetary Reactorin a 8x6-inch configuration for the growth of GaN epitaxial layers. Following the system installation, the company has announced the release of GaN-on-SiC on silicon substrates for this year.

A close up of Aixtron Planetary Reactor (Deposition Chamber) 8x6″ Configuration. (Photo: Aixtron)

Air Water selected the AIXTRON MOCVD system based on its ability to deliver superior material uniformity, a key factor in demonstrating the advantage of Air Water substrates for GaN epitaxy. In order to address future market demand, Air Water is considering upgrading the system to an AIXTRON AIX G5+, which can handle up to 5x200 mm (8-inch) silicon substrates. 

Compared to traditional silicon substrates, the additional SiC layer displays the advantage of protecting the Si substrate in the initial GaN nucleation process. Due to its crystal structure SiC is considered as an ideal template for the GaN growth. Therefore, the SiC-on-Si substrate is enabling the growth of superior crystal quality GaN layers onto large areas. This characteristic brings efficiency and cost savings to a wide range of high-power and LED applications.

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