Kyma’s  new n+ GaN substrate product line will boast a bulk resistivity specification of  < 0.02 Ω -cm, which is two orders of magnitude lower in resistivity than Kyma’s previously offered n-type GaN.

What’s more, Kyma has successfully produced n+ bulk GaN wafers with measured carrier concentrations of up to 6 x 1018cm-3and corresponding bulk resistivities of < 0.005 Ω –cm.  The firm’s n-type GaN product is still being offered and, for distinction, is being relabelled as n- GaN (“nminus” GaN). Its n+ GaN offers benefits for vertical devices as well as reduced contact resistance for all devices.

“The high electron concentrations in this new product line directly support higher performance and reliability for a number of device applications of great commercial interest.” said Jacob Leach, Kyma Characterisation and Device Engineer.

These new substrates is in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. Additionally, the development of commercially available 2” diameter and larger n+ bulk GaN substrates is underway.

The market for nitride semiconductor devices is expected to surpass $90B over the long term, including over $60B in visible lighting applications and over $30B in power electronics applications.