Translucent, Inc., has designed a proprietary GaN-on-Si wafer template with embedded DBR mirrors for low-cost LED growth application.

With its new embedded silicon solution (Mirrored Si™), LEDs can now be grown directly on top of the GaN-on-Si template that includes an embedded DBR mirror, directly lattice matched to the silicon substrate.

On top of this DBR mirror is a layer of proprietary patented Rare Earth Oxide (REO), which allows GaN to cap the template and does not require subsequent removal of the substrate.

At present, the company is preparing to scale its embedded silicon mirror technology for commercial rollout with 150 mm and 200 mm wafers.
And this structure and the process used to grow it will be explained at the International Conference on Nitride Semiconductors, Glasgow, Scotland.

About Translucent
Translucent, Inc., a subsidiary of Australian listed company Silex Systems Limited., is a materials-based company founded in 2001 that focuses on using rare-earth oxides to provide low-cost, silicon-based templates for epitaxial growth of semiconductors. With its emphasis on GaN- and Ge-compatible growth platforms, Translucent provides products for the solar, power FET, and LED industries.