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Home > News > Bridgelux Makes Breakthroughs on GaN-on-Silicon Based LED Technology
March.9, 2011 - 10:06 — jasminezhuang
  

Bridgelux Makes Breakthroughs on GaN-on-Silicon Based LED Technology

Bridgelux  has made a breakthrough on the 135 Lumens per Watt GaN-on-Silicon based LED Technology, which marks the industry's first commercial grade performance for a Silicon-based LED.

The 135 Lumen per Watt performance was achieved at a CCT of 4730K using a single 1.5mm power LED operated at 350mA. These LEDs operate just 2.90V at 350mA and < 3.25V at 1 Amp. Optimization of the epitaxy process on 8-inch Si wafers will make LED manufacturing compatible with existing automated semiconductor lines.

It’s said that the company will leverage its strong R&D and Intellectual Property position in LED epitaxy to jointly manufacture silicon based LEDs.

Currently, it is in discussions with a number of established semiconductor companies regarding the utilization of the many fully depreciated 8-inch semiconductor fabrication operations available all over the world.

 

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