ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.

ALLOS Semiconductors and Ennostar announce strategic partnership for 200 mm GaN-on-Si epiwafers

Through this partnership, ALLOS will be able to deliver its industry-leading GaN-on-Si epiwafers at the volumes required by its customers, supporting their transition into microLED volume production. Ennostar takes on the role of ALLOS’ manufacturing partner for 200 mm GaN-on-Si LED epiwafers. With one of the world’s largest LED manufacturing infrastructures and deep expertise in high-end LED technologies, including microLEDs, Ennostar is uniquely positioned for this partnership. In addition to manufacturing, Ennostar will also contribute its advanced LED-related technologies to further enhance the product performance.

“With Ennostar we work with the best possible partner to provide our customers with a high quality and scalable supply of epiwafers. Together we can offer the industry's best combination of highest LED efficiency and superior on-wafer and wafer-to-wafer yields for microLED chip manufacturing,” said Burkhard Slischka, co-founder and CEO of ALLOS.

“This partnership delivers competitive GaN-on-Si microLED solutions and provides a scalable production pathway compatible with standard silicon foundry processes,” said Dr. Terry Tang, President of Ennostar Corporation. “By partnering with ALLOS, we can now address the 200 mm GaN-on-Si LED epiwafer segment alongside our existing market-leading microLED solutions, offering a uniquely comprehensive value proposition to the rapidly evolving microLED industry.”

ALLOS’ epiwafer products are engineered to meet the stringent requirements of microLED applications, including uniformity, elimination of micro-defects, and optimized driving currents. Designed for compatibility with standard silicon fabs, the epiwafers are available in a thickness of 725 µm and conform to silicon industry cleanliness and contamination standards.

GaN-on-Si epiwafers from ALLOS Semiconductors, pictured in a cassette-to-cassette transfer module at ALLOS’ manufacturing partner Ennostar

By combining ALLOS’ proprietary buffer and n-GaN layers with Ennostar’s cutting-edge LED layer technologies, the resulting GaN-on-Si LED epiwafers deliver brightness and energy efficiency on par with conventional GaN-on-sapphire solutions.

“We share our customers’ vision that using standard silicon fabs for microLED manufacturing will unlock the yield and cost efficiencies needed to make mass production of microLEDs economically viable,” explained Burkhard Slischka the company’s business strategy and adds, "Through our partnership with Ennostar, we can now quickly scale up epiwafer production with increasing demand for microLED products.”

The partnership also paves the way for 300 mm GaN-on-Si LED epiwafers, enabling efficient integration with 300 mm logic wafers – essential, for example, to enable ultra-fast and energy-efficient optical interconnects between AI processors and memory chips using microLED light sources. ALLOS has already demonstrated 300 mm capability since 2020 and continues to refine the technology with lead customers. For further information and product inquiries, please contact the ALLOS Semiconductors sales team.

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