2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
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ViewSonic Corp., a leading global provider of visual and edtech solutions, announced that the LDS136-152 Mobile Direct View LED Display Solution has been awarded Pro AV Best in Market Award from AV Technology, Systems Contractor News, and Soun... READ MORE

For three decades, white LEDs have depended on rare earth materials such as yttrium aluminum garnet (YAG) layered onto a blue LED chip (Figure 1). Seoul Viosys Co., Ltd. (KOSDAQ: 092190) today announced that it has broken that dependence. It h... READ MORE