2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading
Signify, the world leader in lighting, announced it has been included in the Dow Jones Best-in-Class (DJ BIC) World Index for the ninth consecutive year. The recognition reflects Signify’s sustained performance in environmental, social a... READ MORE
Whether a breakdown on the motorway, stranded vehicles on country roads or maintenance work at the roadside: in critical situations, visibility is the key to safety. With the new OSRAM LEDguardian® ROAD FLARE Signal TA20 NXT, ams OSRAM is ... READ MORE