2012-06-12

Plessey Orders AIXTRON CRIUS II-XL Reactor for GaN-on-Si LED Production

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials. AIXTRON’s local support team will install and commission this first reactor before the end of June 2012 in Plessey’s state-of-the-art cleanroom facility located in Plymouth, UK. Barry Dennington,...
Continue reading

ViewSonic Corp., a leading global provider of visual solutions, brought its cutting-edge display technologies to 2025 Creative Expo Taiwan, transforming art into immersive visual experiences. The theme for 2025, Water Scapes, celebrated Taiwan... READ MORE

A jointly developed demonstrator from ams OSRAM and DP Patterning points to where automotive lighting networks are heading: single-layer flexible printed circuit boards (FPCBs) instead of complex multilayer designs — and, in the structur... READ MORE