2013-12-05

Plessey Releases New Generation of GaN-on-Si LEDs

Plessey announced today availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey’s first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. Using standard silicon semiconductor production techniques, Plessey is able to achieve high flux output LED products at substantially lower cost. The PLW114050 is the first in a family of entry level LED lighting products that will be released. 
Continue reading
Silanna UV, a global innovator in ultraviolet semiconductor technology, today announced the release of an additional package type: a TO-39 flat window package for its high-performance SF1 series (Far-UVC 235 nm) and SN3 series (Deep-UVC 255 nm) L... READ MORE

Ennostar, a leading vertically integrated optoelectronic semiconductor company, will showcase its latest Micro LED optical communication innovations at Touch Taiwan 2026, in collaboration with AUO Corporation and Tyntek Corporation. In additio... READ MORE