The Availability of Semi-Polar GaN Wafers for LED Makers

Ostendo Technologies Inc. and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, announce their joint development on Semi-Polar (11-22) GaN layer on sapphire substrate wafers is now available.

It’s reported that uses Ostendo's proprietary design and TDI's proprietary Hydride Vapor Phase Epitaxy (HVPE) technology.

This joint development now provides the opportunity to leading High Brightness LED and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.

About Ostendo Technologies
Ostendo Technologies Inc. (Ostendo) is a developer of Solid State Light (SSL) based display technologies and products for commercial and consumer markets with the objective to achieve efficiencies and cost effectiveness at the material, the device and the system levels. Ostendo’s enabling technologies support products that are disruptive in their individual marketplaces.

About Technologies and Devices International, Inc. (TDI)
TDI, a wholly owned subsidiary of Oxford Instruments, is a world leader in the development of Hydride Vapor Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors such as GaN, AlN, AlGaN, InN, InGaN. Using TDI HVPE technology, Oxford Instruments can produce templates for applications such as High Brightness LED, Laser Diodes and High Electron Mobility Transistors (HEMT).

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