BluGlass partners with Ganvix to develop GaN VCSELs

BluGlass has signed a paid development agreement with Ganvix, Inc - a leading developer of GaN Vertical Cavity Surface Emitting Lasers (VCSELs) Ganvix has selected BluGlass’ RPCVD technology to enable the development of green VCSELs for advanced applications    Global semiconductor developer BluGlass Limited (ASX: BLG) has entered into a collaboration agreement with Ganvix, Inc. to develop cutting-edge gallium nitride (GaN) vertical cavity surface emitting lasers (VCSELs) for green wavelengths (515nm-525nm). Ganvi...
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Taiwan’s Industrial Technology Research Institute Partners with Oxford Instruments to Enter Compound Semiconductor Market

GaN, the “Black Technology” in the compound semiconductor market, can largely reduce product size thanks to its high power and high density. The compound also maintains excellent properties under high-frequency, high-temperature and high-voltage circumstances. The increasing demand for GaN in 5G/6G, renewable energy and electric vehicle markets will boost the material’s value in the context of consumer electronics and related industrial chains. GaN is going to be the next-gen “superstar” in the semiconductor industry. The Department of Industri...
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Stacking Three III-Nitride LEDs

Ohio State University and Sandia National Laboratories in the USA claim the first demonstration of triple-junction cascaded III-nitride light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) [Zane Jamal-Eddine et al, Appl. Phys. Express, v14, p092003, 2021]. Stacking LEDs is one way to overcome the limitations in output power density imposed by the effects of efficiency droop at large current density. Tunnel-junction (TJ) structures are used to connect LEDs since they enable electron majority carriers to be transformed to ...
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An Overview of China’s Third-Generation Semiconductor Industry in a Global Context

Some of the advantages of third-generation semiconductors SiC and GaN include their ability to operate under high voltages, high temperatures (for SiC), and high frequencies(for GaN). Not only do these advantages allow manufacturers to significantly reduce the physical sizes of chips, but peripheral circuit designs can also be simplified as a result, thereby further reducing the sizes of modules, peripheral components, and cooling systems. That is why SiC and GaN have become important strategic focuses of the global semiconductor industry. As part of its ongoing goa...
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Third-Generation Semiconductor GaN Technology Expected to Revolutionize the Fast Charging Industry

In response to the increasing demands of mobile applications, manufacturers are now placing a priority on extending the battery life of such devices like smartphones and notebook computers. However, due to the inherent limitations of physical space in these devices, the quest for ever-greater battery capacity has seemingly reached a bottleneck, forcing them to look elsewhere for solutions, hence the development of fast charging technology. As such, fast chargers equipped with GaN (Gallium nitride, which is a third-generation semiconductor) chips have are now expected to introduce th...
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Porotech Launches Groundbreaking Micro-LED Product

World first is set to transform next-generation display technology. University of Cambridge spin-out Porotech has today announced the launch of its first product based on its breakthrough gallium nitride (GaN) production technique that is set to transform the electronics industry. The company has launched the world's first commercial native red LED epiwafer for micro-LED applications. Micro-LED display technology offers a huge improvement on standard display panels due to its optimum brightness, efficiency and image definition, as well as improved lifetime. These b...
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Cambridge Spin-out Poro Technologies Announces Seed Round Founding of £1.5M

Poro Technologies (Porotech), is a spin-out from the University of Cambridge focusing on GaN material technology. The company has closed a GBP 1.5 million (US$ 1.86 million) seed round investment. According to the report of Cambridge, the investment will support Porotech to develop a pilot plant in Cambridge and its first major products. The seed round was co-led by Cambridge Enterprise, the commercialization arm of the University of Cambridge, and IQ Capital Partners, with the additional participation of Martlet Capital and a syndicate of angel investors from ...
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STMicroelectronics Teams up with TSMC to Push GaN Solution Development

STMicroelectronics announced the collaboration with TSMC to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through this partnership, ST’s GaN products will be manufactured using TSMC’s GaN process technology. GaN is a wide bandgap semiconductor material which is considered outpacing traditional Silicon-based semiconductors for power applications. GaN is more energy efficient at high power and allows the design of more compact devices for better form fact...
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AIXTRON Delivers MOCVD System to Japan’s Nagoya University for GaN-based Deep UV Optoelectronic Devices

German semiconductor equipment provider AIXTRON announced its partnership with Nagoya University in Japan. The equipment maker has delivered a Close Coupled Showerhead® (CCS) system to the University’s Institute of Materials and Systems for Sustainability (IMaSS). AIXTRONs 3x2-inch Flip Top CCS MOCVD platform is intended for research in the field of GaN-based deep ultra-violet (DUV) optoelectronic devices. Specially designed for research and small series production, the AIXTRON system enables real scaling from R&D ...
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Nobel Laureate Hirosh Amano Shares Insights about Blue and UV-C LED Development and the Potential of GaN Power

Dr. Hiroshi Amano, a 2014 Nobel laureate in physics, delivered a lecture at Academia Sinica, Taipei, Taiwan on October 3rd, sharing his research progress on GaN blue LED with Prof. Isamu Akasaki and how he has transferred his research focus from blue LED to UV LED and GaN power. He also highlighted the potential applications of GaN technology in the era of IoT and 5G. 
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[SEMICON Taiwan] Equipment Producers Lead the Development of Power Components and Optoelectronics

SEMICON Taiwan 2018 was held at Taipei Nangang Exhibition Center on September 5 -7. Many leading equipment manufacturers have joined the event including Aixtron, Veeco, Kulicke & Soffa, MPI Corporation and Toray. These equipment makers have introduced the latest trends of power components and optoelectronic. 
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Researchers Find New GaN Properties Suitable for Wide-Range of Applications

Gallium nitride (GaN) has emerged as one of the most important and widely used semiconducting materials. Its optoelectronic and mechanical properties make it ideal for a variety of applications, including light-emitting diodes (LEDs), high-temperature transistors, sensors and biocompatible electronic implants in humans.
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Aixtron and Grand Chip Investment Go Against CFIUS Objections

German MOCVD manufacturer Aixtron and Chinese investor Grand Chip Investment are determined to complete the acquisition business transaction despite objections raised by the Committee on Foreign Investment in the United States (CFIUS).
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Two GaN Systems’ Founders Retire

Ten years after launching a gallium nitride (GaN) semiconductor company, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems into the world leading manufacturer of GaN power transistors and supplier to more than 500 customers, serial entrepreneurs Patterson and Roberts will leave their operating roles. Patterson will retain a position on GaN Systems’ Board of Directors, while Roberts will remain available to the company as an emeritus contributor.
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Chinese Manufacturers Catch up in GaN Technology

Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the upstream sector.
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NXP Unveils New High Performance GaN RF Power Transistors for Cellular Base Stations

NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.
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Control a GaN Power Stage with a Hercules LaunchPad Development Kit

In my last blog post, I walked you through a hands-on project: dimming a lamp with a gallium nitride (GaN) power stage, a Hercules™ microcontroller and a scroll wheel. I covered setup, design and how to drive the power stage the right way.
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TI Calls Attention to Standards for Making Reliable GaN Power Transistors

Sandeep Bahl of Texas Instrument stresses the importance of making reliable GaN material will largely rely on joint efforts in the industry to establish related standards in this blog entry.
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Veeco Partners with imec to Boost Performance in GaN-Based Power Devices

Veeco Instruments Inc., the world’s leading supplier of metal organic chemical vapor deposition (MOCVD) systems, announced today that it has signed a joint development project (JDP) agreement with imec, the Belgium-based nano-electronics research center.  The collaboration is expected to accelerate the development of highly-efficient, Gallium Nitride (GaN) based, power electronic devices using GaN Epi wafers created using Veeco’s Propel® Power GaN MOCVD system.
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U.S. Researchers Unveil Oxygen’s Role in Strengthening Red LEDs

In the fabrication of solid state lighting devices, scientists are learning, oxygen also plays a two-edged role. While oxygen can impede the effectiveness of gallium nitride (GaN), an enabling material for LEDs, small amounts of oxygen in some cases are needed to enhance the devices' optical properties. GaN doped with europium (Eu), which could provide the red color in LEDs and other displays, is one such case.
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OEM Group Receives AGHeatpulse RTP System Order From Leading LED Manufacturer

Global semiconductor capital equipment manufacturer OEM Group announced today that a leading maker of LED products has placed a repeat order for an AGHeatpulse® RTP system. The system will be used for annealing gallium-nitride (GaN) films deposited on 150mm sapphire substrates, one of the critical process steps needed in advanced LED fabrication. This repeat order validates again the AGHeatpulse® RTP system's demonstrated capabilities meeting the exacting thermal requirements of new LED manufacturing technologies, and supports the LED industry's move from batch processing of smaller diameter sapphire substrates to single wafer processing of 150mm sapphire substrates.
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Danish Researchers: Nanowires Could Become the Future for LEDs

The latest research from the Niels Bohr Institute shows that LEDs made from nanowires will use less energy and provide better light. The researchers studied nanowires using X-ray microscopy and with this method they can pinpoint exactly how the nanowire should be designed to give the best properties. The results are published in the scientific journal, ACS Nano.
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How to Design with GaN Drivers

You may have recently encountered “GaN,” which is replacing silicon (Si) in some key applications for power conversion. In this blog series, “How to design with GaN,” I will take a look at how gallium nitride (GaN) is different from Si and what the key considerations are when creating a power design with GaN.
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Fraunhofer Institute for Applied Solid State Physics Acquires Veeco GaN MOCVD System

Veeco Instruments announced that the Fraunhofer Institute for Applied Solid State Physics IAF, a leading German compound semiconductor research institution, has purchased a TurboDisc® K465i Gallium Nitride (GaN) MOCVD System. 
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AIX R6 Sets New Standards in LED Manufacturing

AIXTRON, a worldwide leading provider of deposition equipment to the semiconductor industry, today presented its next generation MOCVD system at the China SSL international trade fair. The new AIX R6 has been designed for the production of LEDs based on Gallium Nitride (GaN) and can be delivered in 12x6-, 31x4-, 121x2-inch wafer configurations. Equipped with numerous technical innovations the new tool will lower operational costs significantly while simplifying usability and process control.
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Fukuda Crystal Laboratory’s 2” SCAM Crystal Might Replace Sapphire Substrates in the Future

Japan’s Fukuda Crystal Laboratory has successfully developed a 50 mm (about 2-inch) ScAlMgO4 (SCAM) crystal, according to a Chinese-language Nikkei Technology report.
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Roskill: Gallium Market to Benefit as GaN-based LED Lighting Comes of Age

Demand for gallium is forecast to rise rapidly between 2014 and 2020 as general lighting moves away from incandescent and fluorescent lamps to light-emitting diodes (LEDs).  This strong growth is not, however, likely to result in any tightness in supply as the market is oversupplied and likely to remain so.  
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New Technique Makes LEDs Brighter, More Resilient

Researchers from North Carolina State University have developed a new processing technique that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosphorus-derived acid.
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New York City Businesses Can Save Big on Soraa’s Industry Leading LED MR16 Lamps

To accelerate the adoption of high quality, energy efficient LED lighting Con Edison of New York is offering substantial rebates (approximately $22, based on 13.2¢/kWh) on Soraa’s GaN on GaN™, full visible spectrum LED MR16 lamps. With the rebates, New York City businesses now have another incentive to install Soraa’s MR16 LED lamps, well known as the best LED MR16 retrofit lamp available, delivering the highest light output, color rendering, whiteness, and beam of any comparable product. Soraa will help you transform your ordinary li...
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Cree Licenses GaN Device Patents to Transphorm

Cree, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN power devices, including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and...
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NF2W585AR-P8 is a dual function LED that provides both white light and high doses of energy geared for inactivation of various prevalent bacteria. With a 405nm wavelength1 die known to be effective in sterilization, this LED can be used t... READ MORE

  The 5050 LED is replacing the 3535 LED, which has long been the leader in the outdoor lighting market. The existing ceramic-based 3535 has excellent reliability but is expensive. At present, the 5050 LED, which has achieved remarkable p... READ MORE