2023-12-22

Red InGaN micro-LEDs on freestanding substrates

Tsinghua University and Beijing National Laboratory for Condensed Matter Physics in China have reported on the use of freestanding gallium nitride substrates (FGS) for red indium gallium nitride (InGaN) micro-light-emitting diodes (LEDs) in terms of efficiency and uniformity across arrays of devices [Luming Yu et al, Appl. Phys. Lett., v123, p232106, 2023]. The researchers claim that InGaN red micro-LEDs with etching-defined mesa size <5μm have not previously been reported. Although it is difficult to achieve high efficiency using indium gallium nitrid...
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2017-09-27

AIXTRON Provides Novel Deposition System to EPFL for 2D Materials Research

AIXTRON announced that the École Polytechnique Fédérale de Lausanne (EPFL) in Lausanne (Switzerland) has purchased a BM NOVO system. This versatile tool which can produce virtually all variations of 2-dimensional materials (2D) required for emerging optoelectronic applications is dedicated to support the University’s research projects coordinated by Prof. Andras Kis and Prof. Aleksandra Radenovic.
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2008-09-11

Aviza displaces rival at the key LED maker

It’s reported that Aviza Technology, the semiconductor equipment vendor with a renewed focus on the compounds sector, has scored a major win with a substantial order for its etch and CVD tools.
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Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and Blizzard Lighting LLC (‘Blizzard’) today announced that they have reached a mutually beneficial settlement resolving a patent infringement dispute involving Cree LED’s p... READ MORE

ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration r... READ MORE