2019-03-11

Vertically Integrated GaN LEDs Proposed to Advance Micro LED Display

Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays. Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming. (Image: Hartensveld and Zhang) Comb...
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Tokushima, Japan – 17 June 2022: Nichia, the world’s largest LED manufacturer and inventor of high-brightness blue and white LEDs, announces the addition of the Direct Mountable Chip Series (Part Number: NVSWE21A-V1) to the portfol... READ MORE

DURHAM, N.C.--(BUSINESS WIRE)--Cree LED, an SGH company (Nasdaq: SGH), announced today the launch of XLamp® Element G LEDs, delivering a new product class with unmatched light output and efficiency for LEDs of this size. The... READ MORE