Vertically Integrated GaN LEDs Proposed to Advance Micro LED Display

Researchers at Rochester Institute of Technology in the U.S. proposed a new designed vertical integration of GaN LED which enables improved efficiency of Micro LED displays.

Matthew Hartensveld and Jing Zhang from Rochester Institute of Technology published a new study on IEEE Electron Device Letter describing how they managed to vertically integrated nanowire GaN field-effect transistors (FETs) and InGaN LEDs. The novel structure places the transistor below the LED which for controlling and dimming.


(Image: Hartensveld and Zhang)

Combining the transistor and LED, the researchers created a compact structure with easier fabrication that is more cost effective to improve the development of Micro LED displays. According to the study, the new structure allows more LEDs to be placed in an area, leading to higher pixel densities and resolution.

The new design is thus helpful in the development of Micro LED display with the reduced pixel size and advanced densities.

Currently the limitation of the vertical design is that it requires a negative voltage to turn the LEDs off but the researchers are working on the improvement.

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