2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Daktronics of Brookings, South Dakota, has partnered with the American Association of Professional Baseball (AAPB) as its official video display and control equipment provider to bring education and professional sports together. “This pa... READ MORE

As Nichia marks the key milestones of 70 years in business and 30 years since pioneering the white LED, its European division has organized a two-day, invite-only Innovation Gallery. Held on 10 and 11 March at Bernhard Knaus Fine Art, a presti... READ MORE