2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
Continue reading

Fluence, a leading global provider of energy-efficient LED lighting solutions for commercial cannabis production, is introducing the latest fixture in its VYPR top light series: VYPR 4. The low-profile luminaire features a fully sealed, triple... READ MORE

Samsung Electronics Singapore demonstrated its ongoing commitment to the future of virtual production in Southeast Asia and Oceania with a showcase of The Wall for Virtual Production (IVC series) in Singapore. Developed in collaboration with A... READ MORE