2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Delivering a new game-day experience to Tar Heels fans at Kenan Stadium, Daktronics (NASDAQ: DAKT) of Brookings, South Dakota, partnered with the University of North Carolina (UNC) in Chapel Hill to manufacture and install 11 LED displays tota... READ MORE

Sumitomo Chemical is pleased to announce its participation in PCIM Europe 2026, which will be held in Nuremberg, Germany, from Tuesday, June 9 to Thursday, June 11, 2026. Established in 1979, this annual event showcases the latest advancements... READ MORE