2012-10-08

ON Semiconductor Joins imec’s Program for GaN-on-Si Power Devices

ON Semiconductor has joined the multi-partner, industrial research and development program at imec, to develop next-generation GaN-on-Silicon power devices. Currently, GaN-based power devices are too expensive for large volume manufacturing, as they are fabricated on small diameter wafers using non-standard production processes. Imec’s research program is focused on developing GaN-on-silicon technology on 200 mm wafers, as well as reducing the cost and improving the performance of GaN devices. Imec’s power devices on 200mm CMOS-compatible GaN-on-Sili...
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Tokushima, Japan - 6 March 2024: Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, has started mass production of the new UV-B (308nm) and UV-A (330nm) LEDs in its popular 434 Series packa... READ MORE

New XLamp® S Line LEDs enhance growth, last longer, lower energy costs Horticulture and other forms of agricultural lighting require application-tuned ratios of spectral content, high efficacy and long lifetimes. Whether you are interested... READ MORE