An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research at the Queensland Micro and Nanotechnology Facility (QMF) of Griffith University, and a tie-up with Gwent-based fab equipment maker SPTS Technologies. "Fabricating GaN LEDs and power devices on large diameter silicon wafers is viewed as a path to reduce cost. However, existing buffer layers used to bridge the large th...