Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will pave the way for the transition to 5G technology with higher data volumes and thus, enhanced user-experience.