Researchers in China and Japan have demonstrated a monolithic gallium nitride (GaN) optoelectronic system on silicon (Si) substrate consisting of a transmitter, modulator, waveguide, beam splitter, receivers and monitor [Hao Zhang et al, Appl. Phys. Lett., v121, p181103, 2022].   The team from China’s Nanjing University of Posts and Telecommunications and Zhengzhou University and Japan’s Nagoya University are seeking to promote optoelectronic systems with low power consumption while using monolithic integration on silicon to reduce material, pr...