2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
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Daktronics of Brookings, South Dakota, has partnered with the American Association of Professional Baseball (AAPB) as its official video display and control equipment provider to bring education and professional sports together. “This pa... READ MORE

As Nichia marks the key milestones of 70 years in business and 30 years since pioneering the white LED, its European division has organized a two-day, invite-only Innovation Gallery. Held on 10 and 11 March at Bernhard Knaus Fine Art, a presti... READ MORE