2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
Continue reading
Seoul Semiconductor has developed an innovative LED light source—SunLike—that reproduces a spectrum nearly identical to natural sunlight. The technology is gaining attention for its positive effects on eye health, including reducing ... READ MORE

Pro9™ technology uses Potassium Fluoride Silicon (KSF or PFS) phosphor to boost the efficiency of LED components, especially those delivering higher CRI. Cree LED’s Pro9 LEDs are covered under a technology license from Current Ligh... READ MORE